收藏本站
NVD5863NL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
60
50
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 48 V
T J = 25 ° C
T J = 150 ° C
1.0
100
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
6.7
3.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 41 A
5.6
7.1
m W
CHARGES, CAPACITANCES AND GATE RESISTANCES
V GS = 4.5 V, I D = 41 A
7.2
9.0
Input Capacitance
C iss
3850
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = 25 V
350
220
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 48 V,
I D = 41 A
V GS = 10 V, V DS = 48 V,
I D = 41 A
36
70
3.7
12.3
19.4
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn ? On Delay Time
t d(on)
12.8
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 48 V,
I D = 41 A, R G = 2.5 W
24.4
37.6
55
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 41 A
T J = 25 ° C
T J = 150 ° C
0.88
0.73
1.2
V
Reverse Recovery Time
t RR
31
ns
Charge Time
Discharge Time
ta
tb
V GS = 0 V, dIs/dt = 100 A/ m s,
I S = 41 A
18
13
Reverse Recovery Charge
Q RR
31
nC
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NVD5865NLT4G MOSFET N CH 60V DPAK-4
NVD5867NLT4G MOSFET N-CH 60V 18A DPAK-4
NVD5890NT4G MOSFET N-CH 40V 100A DPAK
NVD6415ANLT4G MOSFET N-CH 100V 23A DPAK-4
NVF2955PT1G MOSFET P CH 60V 1.7A SOT223
NVF5P03T3G MOSFET P-CH 30V 3.7A SOT-223
NVMFD5877NLT1G MOSFET N-CH 60V 17A 8SOIC
NVMFS4841NT1G MOSFET N-CH 30V 89A SO-8FL
相关代理商/技术参数
NVD5865NLT4G 功能描述:MOSFET NFET 60V 34A 18MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD5867NLT4G 功能描述:MOSFET NFET 60V 18A 43MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD5890N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 123 A, Single Na??Channel DPAK
NVD5890NL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 3.7 m, 123 A, Single N.Channel DPAK
NVD5890NLT4G 功能描述:MOSFET 40V T2 DPAK USR GRESHAM F RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD5890NT4G 功能描述:MOSFET 8-64MHZ 3.3V GP EMI RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVD-6 制造商:EDI 制造商全称:Electronic devices inc. 功能描述:NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS
NVD6414ANT4G 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube